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Study of mesa chemical etching for GaSb

机译:GaSb台面化学刻蚀研究

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摘要

@@Different etching solutions were used in mesa etching for GaSb, all in which orthophosphoric acid system were effective. Then we proposed an improved etching solution that include tartaric acid, and proved that the etching solution was suitable for the mesa etching for GaSb.
机译:在GaSb的台面蚀刻中使用了不同的蚀刻溶液,所有这些蚀刻溶液都对正磷酸系统有效。然后,我们提出了一种包含酒石酸的改进刻蚀液,并证明该刻蚀液适用于GaSb的台面刻蚀。

著录项

  • 来源
  • 会议地点 Changchun(CN);Changchun(CN)
  • 作者单位

    National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;

    National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;

    National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;

    National Key Laboratory on High Power Semiconductor asers, Changchun University of Science and Technology, Changchun 130022, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 激光技术、微波激射技术;激光技术、微波激射技术;
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