Based on ANSYS Thermal Analysis of High-power Semiconductor Laser Module

摘要

In various key High-power semiconductor lasers technologies, the heat problem is a crucial technical issue. With the pursuit of power, cooling devices has become more difficult. By ANSYS finite element analysis software, high-power semiconductor laser module temperature distribution of devices were simulated and optimized for high-power semiconductor laser module air cooling system selection process provides the basis for the program, and experiment has been verified. Air cooling of high power diode lasers the key problems can be attributed to an effective chip thermal cooling. By numerical simulation of diode lasers heat transport, Master diode laser thermal distribution. At the same time, Diode laser was established numerical modeling of heat transport model and simulation work due to chip power dissipation caused by hot chips and heat sink temperature distribution. Model design and thermal analysis results show that the laser diode chip area of the working temperature is 44. 7 ℃, heat sink to the bottom surface farthest from the chip temperature is 35. 5 ℃. In the heat sink size 25 mm× 8 mm× 7. 5 mm, the chip and heat sink surface temperature difference 5. 2 , heat sink fins temperature is 25 ℃ , thermal module design can meet the cooling requirements of the chip, optimized to meet the hundred watt level semiconductor laser cooling module.