一种新型a-IGZO TFT集成栅极驱动电路设计

摘要

Reliability of conventional integrated gate driver decreased with amorphous InGaZnO thin film transistors (a-IGZO TFTs) employed, which is assumed to result from the threshold voltage shift.Accordingly, An improved integrated gate circuit was proposed, which exhibited larger redundancy for the threshold voltage shift by controlling the Q-point voltage stability of driver TFTs.It prevented the circuit failure due to threshold voltage shift (Vthshift margin enlarged from less than ±-3 V to ±-9 V) , made integrated gate driver more stable, and led to longer life of liquid crystal display panels.%在传统集成栅驱动电路中采用非晶InGaZnO薄膜晶体管 (a-IGZO TFT) 后会造成信赖性的降低, 经过分析确定原因为驱动TFT阈值电压漂移.本文提出了一种改进的集成栅驱动电路, 通过对驱动TFT栅节点电压的稳定控制, 获得了较大的驱动TFT阈值电压漂移冗余度 (从原来的不到±-3V扩大到±-9V) , 克服了a-IGZO TFT阈值电压漂移所造成的电路失效, 稳定了集成栅驱动电路并延长了液晶显示器面板的寿命.