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首页> 外文期刊>Acta Materialia >IMPURITY EFFECTS ON ADHESION AT AN INTERFACE BETWEEN NiAl AND Mo
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IMPURITY EFFECTS ON ADHESION AT AN INTERFACE BETWEEN NiAl AND Mo

机译:杂质对NiAl和Mo界面粘合的影响

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Fully self consistent (LDA) density functional calculations have been performed to obtain the ideal adhesion energy and peak interfacial stress for rigid fracture of an [001] interface between NiAl and Mo with and without interfacial impurities. These calculations shed light on interfaces in NiAl-Mo eutectic composites in which [001] interfaces between NiAl (CsCl structure) and Mo (b.c.c.) are prominent. In all cases impurities reduce the adhesion energy, from 3.3 J/m~2 for the clean interface to 2.4, 1.5, and 1.4 J/m~2 for C, O, and S impurities, respectively. Interestingly, however, C increases (40.0 GPa), while O (26.0 GPa) and S (18.0 GPa) decrease the peak interfacial stress from that for the clean interface (37.0 GPa). The Har- ris functional was also tested, and it was found that the ordering of adhesion energies and peak interfacial stresses were the same as for the fully self consistent results, but errors in the magnitudes were significant. Misfit dislocations play an important role and are estimated to reduce the adhesion energy of the clean interface by an amount of the order of l0.
机译:已经进行了完全自洽(LDA)密度泛函计算,以获取具有和不具有界面杂质的NiAl和Mo之间[001]界面刚性断裂的理想粘合能和峰值界面应力。这些计算揭示了NiAl-Mo共晶复合材料的界面,其中NiAl(CsCl结构)和Mo(b.c.c.)之间的[001]界面突出。在所有情况下,杂质都会降低附着力,从清洁界面的3.3 J / m〜2降低到C,O和S杂质的2.4、1.5和1.4 J / m〜2。然而,有趣的是,C值增加了(40.0 GPa),而O(26.0 GPa)和S(18.0 GPa)降低了界面的峰值应力,而清洁界面的峰值应力为(37.0 GPa)。还测试了Harris功能,发现粘附能和峰值界面应力的顺序与完全自洽的结果相同,但是幅度的误差很大。错配位错起着重要的作用,据估计可使干净界面的粘附能降低10个数量级。

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