Interface Properties of 4H-SiC ( $11bar {2}0$ ) and ( $1bar {1}00$ ) MOS Structures Annealed in NO

摘要

Interface properties of 4H-SiC (110) and (100) metal–oxide–semiconductor (MOS) structures annealed in nitric oxide are characterized by conductance, high–low, and – methods. Compared with 4H-SiC (0001) MOS structures, generation of very fast interface states by nitridation is much smaller in 4H-SiC () and (). The effective mobility of planar MOSFETs fabricated on Al-implanted -body doped to cm is 103 cm/Vs on (100), 92 cm/Vs on (110), and 20 cm/Vs on (0001). The mobility-limiting factors are discussed on the basis of experimental results. The high channel mobilities for () and () MOSFETs can be correlated with the l- wer density of fast interface states generated by nitridation.