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首页> 外文期刊>Journal of Applied Physics >Interface-modification-enhanced tunnel electroresistance in multiferroic tunnel junctions
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Interface-modification-enhanced tunnel electroresistance in multiferroic tunnel junctions

机译:多铁隧道连接处的界面改性增强隧道电阻

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摘要

We report a large tunnel electroresistance (TER) effect up to ∼104% in La0.67Sr0.33MnO3/BaTiO3/Co (LSMO/BTO/Co) multiferroic tunnel junctions (MFTJs), which couples with well-defined tunnel magnetoresistance. The large TER is related to (LaAlO3)0.3(LaSrTaO6)0.7 substrates which guarantee a high-quality LSMO/BTO interface and robust ferroelectricity in BTO. The insert of 0.5 nm-thick Pt between the Co electrode and BTO barrier further enhances the TER value to 105% and improves the endurance of the MFTJs, ascribed to the shortened screening length and reduced oxidation of BTO/Co interface. Their use would advance the process towards practical MFTJs with four resistance states.
机译:我们报道了在La 0.67 Sr 0.33 MnO 3 %的大隧道电阻(TER)效应> / BaTiO 3 / Co(LSMO / BTO / Co)多铁性隧道结(MFTJ),其与定义明确的隧道磁阻耦合。较大的TER与(LaAlO 3 0.3 (LaSrTaO 6 0.7 底物有关,该底物可确保优质的LSMO / BTO接口和BTO中强大的铁电性能。在Co电极和BTO势垒之间插入0.5μm厚的Pt进一步将TER值提高到10 5 %,并提高了MFTJ的耐久性,这归因于BTO的筛选长度缩短和氧化减少/ Co接口。它们的使用将推动该过程向具有四个抵抗状态的实际MFTJ过渡。

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