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Magnetic shielding of Hall thrusters at high discharge voltages

机译:霍尔推进器在高放电电压下的磁屏蔽

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A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300–700 V (Isp ≈ 2000–2700 s) at 6 kW, and 800 V (Isp ≈ 3000) at 9 kW. At 6 kW, the magnetic field topology with which highly effective magnetic shielding was previously demonstrated at 300 V has been retained for all other discharge voltages; only the magnitude of the field has been changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. This is because the channel is long enough to allow hot electrons near the channel exit to cool significantly upon reaching the anode. Thus, despite the rise of the maximum electron temperature in the channel with discharge voltage, the electrons along the grazing lines of force remain cold enough to eliminate or reduce significantly parallel gradients of the plasma potential near the walls. Computed maximum erosion rates in the range of 300–700 V are found not to exceed 10−2 mm/kh. Such rates are ∼3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300 V. At 9 kW and 800 V, saturation of the magnetic circuit did not allow for precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be ∼1 order of magnitude higher (∼10−1 mm/kh) than that at 6 kW. At the outer wall, the ion energy is found to be below the sputtering yield threshold so no measurable erosion is expected.
机译:已经进行了一系列数值模拟和实验,以评估霍尔推力器在放电电压为300–700 V(I sp ≈2000–2700 s)范围内工作时的磁屏蔽效果kW和9 kW时为800 V(I sp ≈3000)。在6 kW时,对于所有其他放电电压,以前在300 V时表现出高效磁屏蔽的磁场拓扑得以保留;仅改变磁场的大小即可获得最佳的推进器性能。已经发现,对于所有研究的放电电压,磁屏蔽仍然是非常有效的。这是因为通道足够长,足以使通道出口附近的热电子在到达阳极时显着冷却。因此,尽管通道中的最高电子温度随着放电电压的升高而升高,但沿掠力线的电子仍保持足够冷,以消除或减小壁附近等离子体电势的明显平行梯度。计算得出的最大腐蚀速率在300–700 V范围内不超过10 −2 mm / kh。这样的速率比在300 V下相同推力器的非屏蔽版本中观察到的速率低约3个数量级。在9 kW和800 V下,磁路的饱和无法提供与在使用过程中所用的完全相同的磁屏蔽拓扑由于该推进器并非设计为在此条件下运行,因此只能以6千瓦的功率运行。因此,发现内壁的最大腐蚀速率比6 kW的腐蚀速率高约1个数量级(约10 -1 mm / kh)。在外壁处发现离子能量低于溅射产率阈值,因此预计无法测量到侵蚀。

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