Preparation of ~(20)Ne, ~(24)Mg, ~(28)Si, ~(32)S, and ~(36)Ar targets by ion implantation into thin carbon foils

C. Wrede; K. Deryckx; B.M. Freeman; A. Garcia; G.C. Harper; A.S.C. Palmer; D.A. Short; D.I. Will

首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Preparation of ~(20)Ne, ~(24)Mg, ~(28)Si, ~(32)S, and ~(36)Ar targets by ion implantation into thin carbon foils

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Preparation of ~(20)Ne, ~(24)Mg, ~(28)Si, ~(32)S, and ~(36)Ar targets by ion implantation into thin carbon foils

机译：通过离子注入薄碳箔中制备〜（20）Ne，〜（24）Mg，〜（28）Si，〜（32）S和〜（36）Ar靶

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The preparation of isotopically pure 3-6 μg/cm~2 targets of ~(20)Ne, ~(24)Mg, ~(28)Si, ~(32)S, and ~(36)Ar by the implantation of 25-70 keV ions into 30 μg/cm~2 carbon foils is described.

机译：通过注入25制备〜（20）Ne，〜（24）Mg，〜（28）Si，〜（32）S和〜（36）Ar的同位素纯3-6μg/ cm〜2靶描述了在70μg/ cm〜2的碳箔中加入-70 keV离子。

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来源
《Nuclear Instruments & Methods in Physics Research》 |2010年第23期|p.3482-3484|共3页
作者
C. Wrede; K. Deryckx; B.M. Freeman; A. Garcia; G.C. Harper; A.S.C. Palmer; D.A. Short; D.I. Will;
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作者单位

Department of Physics, University of Washington, Seattle, WA 98195, USA;

Department of Physics, University of Washington, Seattle, WA 98195, USA;

Department of Physics, University of Washington, Seattle, WA 98195, USA;

Department of Physics, University of Washington, Seattle, WA 98195, USA;

Department of Physics, University of Washington, Seattle, WA 98195, USA;

Department of Physics, University of Washington, Seattle, WA 98195, USA;

Department of Physics, University of Washington, Seattle, WA 98195, USA;

Department of Physics, University of Washington, Seattle, WA 98195, USA;

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正文语种 eng
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关键词
implanted targets; ion implantation; carbon foils; nuclear reactions; noble gases; isotopic purity; ion sources; ion beams; charged particles; low energy;

机译：植入目标;离子注入碳箔核反应;稀有气体同位素纯度离子源;离子束带电粒子低能量;

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Preparation of ~(20)Ne, ~(24)Mg, ~(28)Si, ~(32)S, and ~(36)Ar targets by ion implantation into thin carbon foils

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