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机译:闪存高压设备中的总电离剂量效应
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
oxide trapped charge; RINCE; shallow trench isolation; TID;
机译:用于180 nm闪存技术的基本设备中的总电离剂量效应
机译:一种定量方法,表征周边装置的总电离剂量效应65nm闪存
机译:闪存输入/输出设备中的总电离剂量效应
机译:总电离剂量对闪存的影响
机译:SiGe PMOS器件上的总电离剂量辐射效应和负偏置温度不稳定性
机译:γ射线总电离剂量(TID)对Ag / AlO转换行为的影响X/ Pt RRAM设备
机译:25nm NAND闪存中总电离剂量响应的统计分析