A systematic study on analysis-induced radiation damage in silicon during channeling Rutherford backscattering spectrometry analysis

摘要

Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced radiation damage in silicon. A 140-keV H+ ion beam was incident along (100) Si axis at room temperature to a fluence ranging from 1.6 x 1016 cm"2 to 7.0 x 1016 cm"2. The evolution of the aligned yields versus fluences has been examined and found to agree well with a model proposed by us.