Electron energy loss modelling in small volumes: A Monte Carlo study

摘要

In thin target and sub-volumes, electronic energy losses in single collisions vary considerably for individual charged particles. These fluctuations resulting from the stochastic nature of the interactions can be described through a simulation with Monte Carlo calculations. Models used in the present simulations to describe the electron scattering processes are derived from quantum mechanics. The resulting cross sections for energies up to 200 keV are shown for both processes, i.e. elastic and inelastic interactions. Influence of the Monte Carlo strategy adopted to calculate energy loss spectra (straggling functions) is discussed. Straggling functions calculated from the general purpose Monte Carlo code Penelope and the convolution method of Bichsel are included for comparisons. The results are new. In fact, disagreements have been found in the calculated energy spectra when using different strategies. These deviations are explained in the present study by investigating the thickness dependence on the electron energy. As a central result, energy deposition in silicon detectors can be described accurately when event by event Monte Carlo strategy is used.