Electrical properties of silicon diodes with p+n junctions irradiated with ~(197)Au~(+26) swift heavy ions

摘要

Electrical properties of silicon diodes with p~+n junctions irradiated with ~(197)Au~(+26) swift heavy ions (energy E =350 MeV, fluences of 10~7 cm~(-2) and 10~8 cm~(-2)) and silicon diodes irradiated with electrons (energy E-3.5 MeV, fluences of 10~(15)cm~(-2), 5 × 10~(15)cm~(-2)2 and 10~(16)cm~(-2)) have been investigated. Frequency dependences of the impedance, current-voltage characteristics and switching characteristics of these devices have been studied. Irradiation of the diodes with ~(197)Au~(+26) ions at a fluence of 10s cm~(-2) leads to the formation of a quasi-continuous layer of irradiation-induced defects that enable a combination of characteristics such as a reverse resistance recovery time and direct voltage drop that are better than those for electron-irradiated diodes. Still, the irradiation of high-energy ions results in an increase in recombination currents that are larger than those obtained with electron irradiation, and causes more complicated frequency dispersion of the diode parameters.