Preparation and ferroelectric properties of Bi3.4Ce0.6Ti3O12 thin films grown by sol-gel method

摘要

We have investigated the preparation and properties of Bi3.4Ce0.6Ti3O12 thin films.The Bi3.4Ce0.6Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method.The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy.The thin films showed a perovskite phase and dense microstructure.The dielectric constant and the dissipation factor of the Bi3.4Ce0.6Ti3O12 thin films were about 172 and 0.031 at 1 kHz,respectively.The 2P_r and 2E_c of the Bi3.4Ce0.6Ti3O12 thin films were 67.1 mu C/cm2 and 299.7 kV/cm,respectively,under an applied field of 600 kV/cm.The Bi3.4Ce0.6Ti3O12 film did not show fatigue up to 4.46x10~9 switching cycles at a frequency of 1 MHz,and showed good insulating behavior according to the test of leakage current.