Electronic structure modifications and band gap narrowing in Zn_(0.95)V_(0.05)O

摘要

We present here, structural, optical and electronic structure studies on Zn_(0.95)V_(0.05)O, synthesized using solid state method. Rietveld refinement of x-ray diffraction pattern indicates no considerable change in the lattice of doped ZnO. The band gap of doped sample, as calculated by Kubelka-Munk transformed reflectance spectra, has been found reduced compared to pure ZnO. Considerable changes in absorbance in UV-Vis range is observed in doped sample. V doping induced decrease in band gap is supported by x-ray absorption spectroscopy measurements. It is experimentally confirmed that conduction band edge in Zn_(0.95)V_(0.05)O has shifted towards Fermi level than in pure ZnO.