DISLOCATIONS IN INTERFACES IN THE H.C.P. METALS-I. DEFECTS FORMED BY ABSORPTION OF CRYSTAL DISLOCATIONS

摘要

Atomic-scale computer simulation techniques have been used to investigate the interaction of crystal dislocations with two interfaces in hexagonal-close-packed (h.c.p.) metals, namely the {1012} twin boundary and a (1210}/90°tilt boundary which is incommensurate in the direction perpendicular to the tilt axis. Crystal dislocations are always found to be absorbed in the tilt boundary with concomitant recon- struction of their cores. In the twin boundary, a broader range of interactions is observed, including defect transmission from matrix to twin and decomposition in the interface into discrete defects. The easy gener- ation of mobile twinning dislocations facilitates the latter behaviour. The simulations demonstrate that the core structures of localized interfacial defects exhibit preferred riser configurations. For the twin, the favoured structure is the “basal-on-prism” configuration, whereas risers in the tilt boundary resemble {1012} twin forms. By comparing interaction processes in two interfaces, this investigation elucidates the role of crystallographic considerations and interfacial structure. It also illustrates that the core structure of interfacial defects can be complex and contributes significantly to total defect energy.