PT, CO, AND CU BASED PERPENDICULAR MAGNETIC ANISOTROPY MULTILAYER THIN FILM WITH LOW SATURATION MAGNETIZATION AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a perpendicular magnetic anisotropy multilayer thin film for a magnetic random access memory including a Pt thin film layer and a Co-Cu thin film layer and, more particularly, to a multilayer thin film capable of reducing the influence of a leakage magnetic field by reducing saturation magnetization and maintaining perpendicular magnetic anisotropy by manufacturing the multilayer thin film by comprising a magnetic layer by substituting Cu which is a non-magnetic material for a part of Co which is a magnetic material. The multilayer thin film according to the present invention is used for the magnetic random access memory with high performance and high density by maintaining the perpendicular magnetic anisotropy after a post heat treatment process.;COPYRIGHT KIPO 2015